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Enhanced impurity incorporation by alternate Te and S doping in GaAs prepared by intermittent injection of triethylgallium and arsine in ultra high vacuum
Yutaka Oyama, Kenji Tezuka, Ken Suto, Jun-Ichi NishizawaVolume:
246
Year:
2002
Language:
english
Pages:
6
DOI:
10.1016/s0022-0248(02)01784-0
File:
PDF, 115 KB
english, 2002