On mass transport and surface morphology of sublimation...

Journal of Crystal Growth 2002 Vol. 246; Iss. 1-2

On mass transport and surface morphology of sublimation grown 4H silicon carbide

D Schulz, J Doerschel, M Lechner, H.-J Rost, D Siche, J Wollweber
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Volume:
246
Year:
2002
Language:
english
Pages:
6
DOI:
10.1016/s0022-0248(02)01790-6
File:
PDF, 464 KB
english, 2002
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