MOVPE growth of GaN on Si(1 1 1)...

Journal of Crystal Growth 2003 Vol. 248; Iss. none

MOVPE growth of GaN on Si(1 1 1) substrates

A. Dadgar, M. Poschenrieder, J. Bläsing, O. Contreras, F. Bertram, T. Riemann, A. Reiher, M. Kunze, I. Daumiller, A. Krtschil, A. Diez, A. Kaluza, A. Modlich, M. Kamp, J. Christen, F.A. Ponce, E. Kohn
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Volume:
248
Year:
2003
Language:
english
Pages:
7
DOI:
10.1016/s0022-0248(02)01894-8
File:
PDF, 288 KB
english, 2003
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