MBE growth mode and C incorporation of GeC epilayers on Si(0 0 1) substrates using an arc plasma gun as a novel C source
Motoki Okinaka, Yasumasa Hamana, Takashi Tokuda, Jun Ohta, Masahiro NunoshitaVolume:
249
Year:
2003
Language:
english
Pages:
9
DOI:
10.1016/s0022-0248(02)02107-3
File:
PDF, 381 KB
english, 2003