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Single-crystal zincblende GaN grown on GaP (1 0 0) substrate by molecular beam epitaxy
Min-Ho Kim, F.S. Juang, Y.G. Hong, C.W. Tu, Seong-Ju ParkVolume:
251
Year:
2003
Language:
english
Pages:
6
DOI:
10.1016/s0022-0248(02)02289-3
File:
PDF, 176 KB
english, 2003