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Influence of nitrogen doping on the properties of 4H–SiC single crystals grown by physical vapor transport
H.-J. Rost, J. Doerschel, K. Irmscher, D. Schulz, D. SicheVolume:
257
Year:
2003
Language:
english
Pages:
9
DOI:
10.1016/s0022-0248(03)01413-1
File:
PDF, 255 KB
english, 2003