Growth parameters effect on the thermoelectric...

Journal of Crystal Growth 2003 Vol. 258; Iss. 1-2

Growth parameters effect on the thermoelectric characteristics of Bi2Se3 thin films grown by MOCVD system using Ditertiarybutylselenide as a precursor

A.Al Bayaz, A. Giani, M.Al Khalfioui, A. Foucaran, F. Pascal-Delannoy, A. Boyer
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Volume:
258
Year:
2003
Language:
english
Pages:
6
DOI:
10.1016/s0022-0248(03)01511-2
File:
PDF, 223 KB
english, 2003
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