Investigation of mass transport during PVT growth of SiC by...

Journal of Crystal Growth 2003 Vol. 258; Iss. 3-4

Investigation of mass transport during PVT growth of SiC by 13C labeling of source material

Z.G. Herro, P.J. Wellmann, R. Püsche, M. Hundhausen, L. Ley, M. Maier, P. Masri, A. Winnacker
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Volume:
258
Year:
2003
Language:
english
Pages:
7
DOI:
10.1016/s0022-0248(03)01538-0
File:
PDF, 178 KB
english, 2003
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