InAsGaAs in-plane strained superlattices grown on slightly...

Journal of Crystal Growth 1997 Vol. 175-176; Iss. part-P1

InAsGaAs in-plane strained superlattices grown on slightly misoriented (1 1 0) InP substrates by molecular beam epitaxy

Yoshiaki Nakata, Osamu Ueda, Yuji Nishikawa, Shunichi Muto, Naoki Yokoyama
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Volume:
175-176
Year:
1997
Language:
english
Pages:
6
DOI:
10.1016/s0022-0248(96)00826-3
File:
PDF, 567 KB
english, 1997
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