Selective area etching of III–V semiconductors using TDMAAs and TDMASb in metalorganic molecular beam epitaxy chamber
K. Yamamoto, H. Asahi, T. Hayashi, K. Hidaka, S. GondaVolume:
175-176
Year:
1997
Language:
english
Pages:
6
DOI:
10.1016/s0022-0248(96)00863-9
File:
PDF, 426 KB
english, 1997