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MBE growth of high-quality InP for GaInAsInP heterostructures using incongruent evaporation of GaP
H. Künzel, J. Böttcher, P. Harde, R. MaessenVolume:
175-176
Year:
1997
Language:
english
Pages:
5
DOI:
10.1016/s0022-0248(96)00879-2
File:
PDF, 351 KB
english, 1997