(GaMn)As: GaAs-based III–V diluted magnetic semiconductors grown by molecular beam epitaxy
T. Hayashi, M. Tanaka, T. Nishinaga, H. Shimada, H. Tsuchiya, Y. OtukaVolume:
175-176
Year:
1997
Language:
english
Pages:
6
DOI:
10.1016/s0022-0248(96)00937-2
File:
PDF, 401 KB
english, 1997