Formation of multi-atomic steps and novel n-AlGaAsGaAs...

Formation of multi-atomic steps and novel n-AlGaAsGaAs heterojunctions on vicinal (1 1 1)B substrates by MBE and anisotropic transport of 2D electrons

Y. Nakamura, S. Koshiba, H. Sakaki
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Volume:
175-176
Year:
1997
Language:
english
Pages:
5
DOI:
10.1016/s0022-0248(96)00963-3
File:
PDF, 355 KB
english, 1997
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