Initial growth stage of GaN on Si substrate by alternating...

Journal of Crystal Growth 1997 Vol. 175-176; Iss. part-P1

Initial growth stage of GaN on Si substrate by alternating source supply using dimethyl-hydrazine

Akihiro Hashimoto, Yoshitaka Aiba, Takanori Motizuki, Mitugu Ohkubo, Akio Yamamoto
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Volume:
175-176
Year:
1997
Language:
english
Pages:
5
DOI:
10.1016/s0022-0248(96)00979-7
File:
PDF, 452 KB
english, 1997
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