MBE growth of quaternary InGaAlAs layers in InGaAsInAlAs...

MBE growth of quaternary InGaAlAs layers in InGaAsInAlAs HBTs to improve device performance

T.R. Block, J. Cowles, L. Tran, M. Wojtowicz, A.K. Oki, D.C. Streit
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Volume:
175-176
Year:
1997
Language:
english
Pages:
7
DOI:
10.1016/s0022-0248(96)01236-5
File:
PDF, 417 KB
english, 1997
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