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SiC-bulk growth by physical-vapor transport and its global modelling
D. Hofmann, R. Eckstein, M. Kölbl, Y. Makarov, St.G. Müller, E. Schmitt, A. Winnacker, R. Rupp, R. Stein, J. VölklVolume:
174
Year:
1997
Language:
english
Pages:
6
DOI:
10.1016/s0022-0248(97)00037-7
File:
PDF, 448 KB
english, 1997