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Time-dependent simulation of the growth of large silicon crystals by the Czochralski technique using a turbulent model for melt convection
R. Assaker, N. van den Bogaert, F. DupretVolume:
180
Year:
1997
Language:
english
Pages:
11
DOI:
10.1016/s0022-0248(97)00240-6
File:
PDF, 766 KB
english, 1997