GaN epilayers grown at high growth rate using gas source...

Journal of Crystal Growth 1998 Vol. 191; Iss. 1-2

GaN epilayers grown at high growth rate using gas source molecular beam epitaxy method

Xiaobing Li, Dianzhao Sun, Jianping Zhang, Meiying Kong
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Volume:
191
Year:
1998
Language:
english
Pages:
3
DOI:
10.1016/s0022-0248(98)00028-1
File:
PDF, 68 KB
english, 1998
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