The formation of crystalline defects and crystal growth mechanism in InxGa1−xN/GaN heterostructure grown by metalorganic vapor phase epitaxy
Kawaguchi, Yasutoshi, Shimizu, Masaya, Yamaguchi, Masahito, Hiramatsu, Kazumasa, Sawaki, Nobuhiko, Taki, Wataru, Tsuda, Hidetaka, Kuwano, Noriyuki, Oki, Kensuke, Zheleva, Tsvetanka, Davis, Robert FVolume:
189-190
Language:
english
Pages:
5
Journal:
Journal of Crystal Growth
DOI:
10.1016/s0022-0248(98)00149-3
Date:
June, 1998
File:
PDF, 207 KB
english, 1998