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Sub-micron fine structure of GaN by metalorganic vapor phase epitaxy (MOVPE) selective area growth (SAG) and buried structure by epitaxial lateral overgrowth (ELO)
Matsushima, Hidetada, Yamaguchi, Masahito, Hiramatsu, Kazumasa, Sawaki, NobuhikoVolume:
189-190
Language:
english
Pages:
5
Journal:
Journal of Crystal Growth
DOI:
10.1016/s0022-0248(98)00175-4
Date:
June, 1998
File:
PDF, 192 KB
english, 1998