Reduction of etch pit density on GaN by InGaN-strained SQW

Journal of Crystal Growth 1998 / 6 Vol. 189-190

Reduction of etch pit density on GaN by InGaN-strained SQW

Ono, Yoshinobu, Iyechika, Yasushi, Takada, Tomoyuki, Inui, Katsumi, Matsue, Teruyuki
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Volume:
189-190
Language:
english
Pages:
5
Journal:
Journal of Crystal Growth
DOI:
10.1016/s0022-0248(98)00187-0
Date:
June, 1998
File:
PDF, 168 KB
english, 1998
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