The influence of thickness on properties of GaN buffer layer and heavily Si-doped GaN grown by metalorganic vapor-phase epitaxy
Liu, Xianglin, Wang, Lianshan, Lu, Da-Cheng, Wang, Du, Wang, Xiaohui, Lin, LanyingVolume:
189-190
Language:
english
Pages:
4
Journal:
Journal of Crystal Growth
DOI:
10.1016/s0022-0248(98)00264-4
Date:
June, 1998
File:
PDF, 123 KB
english, 1998