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InGaN laser diode grown on 6H-SiC substrate using low-pressure metalorganic vapor phase epitaxy
Kuramata, Akito, Domen, Kay, Soejima, Reiko, Horino, Kazuhiko, Kubota, Shin-ichi, Tanahashi, ToshiyukiVolume:
189-190
Language:
english
Pages:
5
Journal:
Journal of Crystal Growth
DOI:
10.1016/s0022-0248(98)00303-0
Date:
June, 1998
File:
PDF, 113 KB
english, 1998