Lateral overgrowth of high quality GaN layers on GaN/Al2O3...

Lateral overgrowth of high quality GaN layers on GaN/Al2O3 patterned substrates by halide vapour-phase epitaxy

G Nataf, B Beaumont, A Bouillé, S Haffouz, M Vaille, P Gibart
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Volume:
192
Year:
1998
Language:
english
Pages:
6
DOI:
10.1016/s0022-0248(98)00413-8
File:
PDF, 308 KB
english, 1998
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