In0.49Ga0.51P growth on pre-patterned GaAs substrates by...

Journal of Crystal Growth 1998 Vol. 193; Iss. 4

In0.49Ga0.51P growth on pre-patterned GaAs substrates by chemical beam epitaxy

Maria P.P. de Castro, N.C. Frateschi, J. Bettini, M.M. de Carvalho
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Volume:
193
Year:
1998
Language:
english
Pages:
6
DOI:
10.1016/s0022-0248(98)00506-5
File:
PDF, 214 KB
english, 1998
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