Relationship between physical properties and gas...

Journal of Crystal Growth 1998 Vol. 195; Iss. 1-4

Relationship between physical properties and gas purification in GaN grown by metalorganic vapor phase epitaxy

M.A di Forte-Poisson, F Huet, A Romann, M Tordjman, D Lancefield, E Pereira, J Di Persio, B Pecz
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Volume:
195
Year:
1998
Language:
english
Pages:
5
DOI:
10.1016/s0022-0248(98)00584-3
File:
PDF, 244 KB
english, 1998
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