Growth of 6H and 4H–SiC by sublimation epitaxy

Journal of Crystal Growth 1999 Vol. 197; Iss. 1-2

Growth of 6H and 4H–SiC by sublimation epitaxy

M. Syväjärvi, R. Yakimova, M. Tuominen, A. Kakanakova-Georgieva, M.F. MacMillan, A. Henry, Q. Wahab, E. Janzén
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
197
Year:
1999
Language:
english
Pages:
8
DOI:
10.1016/s0022-0248(98)00890-2
File:
PDF, 523 KB
english, 1999
Conversion to is in progress
Conversion to is failed