High quality GaN film growth on AlN buffer layer,...

Journal of Crystal Growth 1999 Vol. 200; Iss. 1-2

High quality GaN film growth on AlN buffer layer, pretreated with alternating pulsative supply of TMG and NH3

Jin Soo Hwang, Satoru Tanaka, Sohachi Iwai, Yoshinobu Aoyagi, Seeyearl Seong
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
200
Year:
1999
Language:
english
Pages:
7
DOI:
10.1016/s0022-0248(98)00893-8
File:
PDF, 332 KB
english, 1999
Conversion to is in progress
Conversion to is failed