![](/img/cover-not-exists.png)
Effects of arsenic beam equivalent pressure on InGaAsP grown by solid source molecular beam epitaxy with continuous white phosphorous production
W Shi, D.H Zhang, H.Q Zheng, S.F Yoon, C.H Kam, A RamanVolume:
197
Year:
1999
Language:
english
Pages:
6
DOI:
10.1016/s0022-0248(98)00909-9
File:
PDF, 218 KB
english, 1999