Surface morphology of InGaAs and InP materials grown with...

Surface morphology of InGaAs and InP materials grown with trimethylarsenic and arsine on vicinal InP substrates

H. Dumont, L. Auvray, J. Dazord, V. Souliere, Y. Monteil, J. Bouix, A. Ougazzaden
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Volume:
197
Year:
1999
Language:
english
Pages:
7
DOI:
10.1016/s0022-0248(98)00970-1
File:
PDF, 346 KB
english, 1999
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