Characterization of beryllium doped Al0.33Ga0.67As layers...

Characterization of beryllium doped Al0.33Ga0.67As layers grown by molecular beam epitaxy

H.Q. Zheng, K. Radhakrishnan, H. Wang, P.H. Zhang, S.F. Yoon, G.I. Ng
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Volume:
197
Year:
1999
Language:
english
Pages:
7
DOI:
10.1016/s0022-0248(98)01068-9
File:
PDF, 236 KB
english, 1999
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