RHEED studies of the GaN surface during growth by molecular...

RHEED studies of the GaN surface during growth by molecular beam epitaxy

O.H Hughes, T.S Cheng, S.V Novikov, C.T Foxon, D Korakakis, N.J Jeffs
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Volume:
201-202
Year:
1999
Language:
english
Pages:
4
DOI:
10.1016/s0022-0248(98)01354-2
File:
PDF, 182 KB
english, 1999
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