Nanofabrication of heavily doped p-type GaAs and n-type...

Journal of Crystal Growth 1999 Vol. 201-202; Iss. none

Nanofabrication of heavily doped p-type GaAs and n-type InGaP by atomic force microscope (AFM)-based surface oxidation process

Yuichi Matsuzaki, Ken-ichiro Yuasa, Jun-ichi Shirakashi, Eduard K Chilla, Akira Yamada, Makoto Konagai
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Volume:
201-202
Year:
1999
Language:
english
Pages:
4
DOI:
10.1016/s0022-0248(98)01443-2
File:
PDF, 192 KB
english, 1999
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