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Quasi-quantum-wire field-effect transistor fabricated by composition-controlled, selective growth in molecular beam epitaxy
Takeyoshi Sugaya, Toshimitsu Takahashi, Tadashi Nakagawa, Mutsuo Ogura, Yoshinobu SugiyamaVolume:
201-202
Year:
1999
Language:
english
Pages:
4
DOI:
10.1016/s0022-0248(98)01451-1
File:
PDF, 135 KB
english, 1999