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MBE-grown laser diodes based on beryllium containing II–VI semiconductors
H.-J Lugauer, M Keim, G Reuscher, P Grabs, U Lunz, A Waag, G Landwehr, S Ivanov, T Shubina, A Toropov, N Il'inskaya, P Kop'ev, Zh AlferovVolume:
201-202
Year:
1999
Language:
english
Pages:
6
DOI:
10.1016/s0022-0248(98)01493-6
File:
PDF, 309 KB
english, 1999