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Very high electron mobilities at low temperatures in InxGa1−xAs/InyAl1−yAs HEMTs grown lattice-mismatched on GaAs substrates
Shin-ichirou Gozu, Kazuhiro Tsuboki, Masaomi Hayashi, Chulun Hong, Syoji YamadaVolume:
201-202
Year:
1999
Language:
english
Pages:
4
DOI:
10.1016/s0022-0248(98)01527-9
File:
PDF, 128 KB
english, 1999