Fabrication of InGaAs quantum dots with an underlying...

Journal of Crystal Growth 1999 Vol. 205; Iss. 4

Fabrication of InGaAs quantum dots with an underlying InGaAlAs layer on GaAs(1 0 0) and high index substrates by molecular beam epitaxy

W.H Jiang, H.Z Xu, B Xu, J Wu, X.L Ye, H.Y Liu, W Zhou, Z.Z Sun, Y.F Li, J.B Liang, Z.G Wang
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Volume:
205
Year:
1999
Language:
english
Pages:
6
DOI:
10.1016/s0022-0248(99)00304-8
File:
PDF, 479 KB
english, 1999
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