Structural properties of AlxGa1−xN grown on sapphire by...

Journal of Crystal Growth 2000 Vol. 208; Iss. 1-4

Structural properties of AlxGa1−xN grown on sapphire by molecular beam epitaxy

Je Won Kim, Chang-Sik Son, In-Hoon Choi, Young K. Park, Yong Tae Kim, O. Ambacher, M. Stutzmann
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
208
Year:
2000
Language:
english
Pages:
5
DOI:
10.1016/s0022-0248(99)00483-2
File:
PDF, 235 KB
english, 2000
Conversion to is in progress
Conversion to is failed