New approach to low-temperature Si epitaxy by using hot...

Journal of Crystal Growth 2000 Vol. 209; Iss. 2-3

New approach to low-temperature Si epitaxy by using hot wire cell method

Tatsuro Watahiki, Akira Yamada, Makoto Konagai
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Volume:
209
Year:
2000
Language:
english
Pages:
4
DOI:
10.1016/s0022-0248(99)00566-7
File:
PDF, 116 KB
english, 2000
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