Plasma-assisted molecular beam epitaxy of...

Journal of Crystal Growth 2000 Vol. 209; Iss. 2-3

Plasma-assisted molecular beam epitaxy of GaN : In film on sapphire(0 0 0 1) having the single polarity of (0 0 0 1)

Saki Sonoda, Saburo Shimizu, Krishnan Balakrishnan, Hajime Okumura
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Volume:
209
Year:
2000
Language:
english
Pages:
4
DOI:
10.1016/s0022-0248(99)00571-0
File:
PDF, 121 KB
english, 2000
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