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Low pressure chemical vapor deposition of silicon nitride using the environmentally friendly tris(dimethylamino)silane precursor
Levy, R. A., Lin, X., Grow, J. M., Boeglin, H. J., Shalvoy, R.Volume:
11
Language:
english
Journal:
Journal of Materials Research
DOI:
10.1557/jmr.1996.0184
Date:
June, 1996
File:
PDF, 246 KB
english, 1996