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Homoepitaxial (111) diamond grown by temperature-controlled chemical vapor deposition
Nishitani-Gamo, Mikka, Sakaguchi, Isao, Takami, Tomohide, Suzuki, Katsunori, Kusunoki, Isao, Ando, ToshihiroVolume:
14
Language:
english
Journal:
Journal of Materials Research
DOI:
10.1557/jmr.1999.0476
Date:
September, 1999
File:
PDF, 1.17 MB
english, 1999