Characterization of GaN grown on sapphire by laser-induced molecular beam epitaxy
Zhou, H., Rühm, A., Jin-Phillipp, N. Y., Phillipp, F., Gross, M., Schröder, H.Volume:
16
Language:
english
Journal:
Journal of Materials Research
DOI:
10.1557/jmr.2001.0039
Date:
January, 2001
File:
PDF, 850 KB
english, 2001