Ultrathin HfO2 gate dielectric grown by plasma-enhanced chemical vapor deposition using Hf[OC(CH3)3]4 as a precursor in the absence of O2
Choi, Kyu-Jeong, Shin, Woong-Chul, Yoon, Soon-GilVolume:
18
Language:
english
Journal:
Journal of Materials Research
DOI:
10.1557/jmr.2003.0009
Date:
January, 2003
File:
PDF, 262 KB
english, 2003