Analysis of MOS Device Capacitance-Voltage Characteristics...

MRS Proceedings 1999 / 1 Vol. 592

Analysis of MOS Device Capacitance-Voltage Characteristics Based on the Self-Consistent Solution of the Schrödinger and Poisson Equations

Raynaud, C., Autran, J.L., Masson, P., Bidaud, M., Poncet, A.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
592
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-592-159
Date:
January, 1999
File:
PDF, 392 KB
english, 1999
Conversion to is in progress
Conversion to is failed