Formation and Properties of Schottky Diodes on 4H-SiC after High Temperature Annealing with Graphite Encapsulation
Wang, Y., Mikhov, M.K., Skromme, B.J.Volume:
527-529
Year:
2006
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/msf.527-529.915
File:
PDF, 1.41 MB
english, 2006