Formation and Properties of Schottky Diodes on 4H-SiC after...

Formation and Properties of Schottky Diodes on 4H-SiC after High Temperature Annealing with Graphite Encapsulation

Wang, Y., Mikhov, M.K., Skromme, B.J.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
527-529
Year:
2006
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/msf.527-529.915
File:
PDF, 1.41 MB
english, 2006
Conversion to is in progress
Conversion to is failed