Effect of the Schottky Barrier Height on the Detection of Midgap Levels in 4H-SiC by Deep Level Transient Spectroscopy
Reshanov, Sergey A., Pensl, Gerhard, Danno, Katsunori, Kimoto, Tsunenobu, Hishiki, Shigeomi, Ohshima, Takeshi, Yan, Fei, Devaty, Robert P., Choyke, W.J.Volume:
600-603
Year:
2009
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/msf.600-603.417
File:
PDF, 324 KB
english, 2009