Reduction of Interface Traps and Enhancement of Channel Mobility in n-Channel 6H-SiC MOSFETs by Irradiation with Gamma-Rays
Hishiki, Shigeomi, Reshanov, Sergey A., Ohshima, Takeshi, Itoh, Hisayoshi, Pensl, GerhardVolume:
600-603
Year:
2009
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/msf.600-603.703
File:
PDF, 2.37 MB
english, 2009