8H Stacking Faults in a 4H-SiC Matrix: Simple Unit Cell or...

Materials Science Forum 2009 Vol. 615-617

8H Stacking Faults in a 4H-SiC Matrix: Simple Unit Cell or Double 3C Quantum Well?

Robert, T., Juillaguet, Sandrine, Marinova, M., Chassagne, Thierry, Tsiaoussis, I., Frangis, N., Polychroniadis, E.K., Camassel, Jean
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Volume:
615-617
Year:
2009
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/msf.615-617.339
File:
PDF, 775 KB
english, 2009
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