Model Calculation of SiC Oxide Growth Rate Based on the Silicon and Carbon Emission Model
Hijikata, Yasuto, Yaguchi, Hiroyuki, Yoshida, SadafumiVolume:
615-617
Year:
2009
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/msf.615-617.489
File:
PDF, 303 KB
english, 2009